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| Silicon MOS FETs (Small Signal) 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.00.2 5.10.2 4.00.2 s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL 13.50.5 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 0.5 1 750 150 -55 to +150 Unit V V A 0.45 -0.1 +0.2 0.45 -0.1 +0.2 1.27 1.27 123 2.540.15 A mW C C s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100A, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ 2.30.2 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package max 10 0.1 Unit A A V 80 1.5 2 300 45 30 8 15 20 3.5 4 V mS pF pF pF ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 Pulse measurement ton, toff measurement circuit Vout Vin = 10V 68 VDD = 30V Vout Vin 10% Vin 10% 90% 90% V t = 1S f = 1MHZ out 50 ton toff 1 Silicon MOS FETs (Small Signal) PD Ta 1200 1.2 Ta=25C 1.0 VGS=5.5V 1.0 2SK614 ID VDS 1.2 VDS=10V Ta=25C ID VGS Allowable power dissipation PD (mW) 1000 Drain current ID (A) 800 0.8 5V Drain current ID (A) 0.8 600 0.6 4.5V 0.6 400 0.4 4V 0.4 3.5V 200 0.2 3V 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0.2 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 600 Ciss, Coss, Crss VDS VDS=15V f=1kHz Ta=25C VGS=0 f=1MHz Ta=25C RDS(on) VGS Drain to source ON-resistance RDS(on) () 6 ID=500mA 5 120 Forward transfer admittance |Yfs| (mS) 500 100 400 80 4 300 60 3 Ta=75C 2 25C -25C 200 40 Ciss 100 20 Coss 0 1 3 10 30 Crss 100 300 1000 1 0 0 1 2 3 4 5 6 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) RDS(on) Ta Drain to source ON-resistance RDS(on) () 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 -50 -25 0 25 50 75 Ambient temperature Ta (C) 2 |
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